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| 2SJ181(L), 2SJ181(S) Silicon P-Channel MOS FET Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 23 2SJ181(L), 2SJ181(S) Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings -600 15 -0.5 -1.0 -0.5 20 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS -600 15 -- -- -2.0 -- 0.3 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 15 0.45 220 55 13 7 20 35 35 -0.85 230 Max -- -- 10 -100 -4.0 25 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = -0.5 A, VGS = 0 I F = -0.5 A, VGS = 0, diF/dt = 50 A/s I D = -0.3 A, VGS = -10 V, RL = 100 Test conditions I D = -10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 12 V, VDS = 0 VDS = -500 V, VGS = 0 I D = -1 mA, VDS = -10 V I D = -0.3 A, VGS = -10 V*1 I D = -0.3 A, VDS = -20 V*1 VDS = -10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2 2SJ181(L), 2SJ181(S) Power vs. Temperature Derating 40 Pch (W) I D (A) -10 -3 Maximum Safe Operation Area 30 Channel Dissipation 20 10 10 s 10 0 PW s 1m DC =1 -0.3 s 0 Op era ms ( tio Operation in n ( 1sh -0.1 o Tc this area is = 2 t) limited by R DS(on) 5 -1 C ) Drain Current -0.03 Ta = 25 C 0 50 100 150 Tc (C) 200 -0.01 -10 -20 -50 -100 -200 -500 -1000 Case Temperature -1.0 -10 V I D (A) -0.8 -6 V Drain to Source Voltage V DS (V) Typical Output Characteristics Pulse Test (A) -0.5 Typical Transfer Characteristics -0.4 Tc = -25 C 75 C 25 C -0.6 ID -5 V Drain Current -4.5 V VGS = -4 V Drain Current -0.3 -0.4 -0.2 -0.2 -0.1 V DS = -20 V Pulse Test 0 -2 -4 -6 Gate to Source Voltage -8 -10 V GS (V) 0 -10 -20 -30 Drain to Source Voltage -40 -50 V DS (V) 3 2SJ181(L), 2SJ181(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage -20 Drain to Source Saturation Voltage V DS(on) (V) Pulse Test -16 -12 I D = -0.5 A -8 -0.2 A -0.1 A 0 -4 -8 12 Gate to Source Voltage -16 -20 V GS (V) -4 Pulse Test 200 100 50 VGS = -10 V 20 10 5 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 Static Drain to Source on State Resistance R DS(on) ( ) Drain to Source On State Resistance R DS(on) ( ) Static Drain to Source on State Resistance vs. Drain Current 500 Static Drain to Source on State Resistance vs. Temperature 40 Pulse Test VGS = -10 V 32 I D = -0.5 A 24 -0.2 A 16 -0.1 A -15 V 8 0 -40 Drain Current I D (A) 0 40 80 120 160 Case Temperature Tc (C) 4 2SJ181(L), 2SJ181(S) Forward Transfer Admittance vs. Drain Current 1000 Reverse Recovery Time trr (ns) Tc = -25 C 25 C 500 Body-Drain Diode Reverse Recovery Time Forward Transfer Admittance |y fs | (S) 2 1 0.5 200 100 50 20 0.2 0.1 75 C 0.05 0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 Drain Current I D (A) V DS = -20 V Pulse Test -5 10 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 Reverse Drain Current I DR (A) di / dt = 100 A / s VGS = 0, Ta = 25 C Typical Capacitance vs. Drain to Source Voltage 1000 300 100 30 10 Crss 3 1 0 -10 -20 -30 -40 -50 Drain to Source Voltage V DS (V) Coss Ciss VGS = 0 f = 1 MHz Capacitance C (pF) 5 2SJ181(L), 2SJ181(S) Dynamic Input Characteristics V DS (V) V DD = -100 V -250 V -400 V V GS (V) Gate to Source Voltage 0 0 -200 -4 Drain to Source Voltage -400 V DS V DD = -100 V -250 V -400 V -8 -600 V GS -800 I D = -0.5 A -12 -16 -20 20 -1000 0 4 8 12 16 Gate Charge Qg (nc) Switching Characteristics 500 V GS = -10 V, V DD = -30 V PW = 5 s, duty < 1 % Switching Time t (ns) 200 100 50 20 10 tf t d(off) tr t d(on) -5 5 -0.05 -0.1 -0.2 -0.5 -1 -2 Drain Current I D (A) 6 2SJ181(L), 2SJ181(S) Reverse Drain Current vs. Source to Drain Voltage -1.0 Reverse Drain Current I DR (A) Pulse Test -0.8 -0.6 -0.4 V GS = -10 V 0, 5 V -0.2 0 -0.2 -0.4 -0.6 -0.8 -1.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.2 0.1 0.05 0.02 0.0 1 0.3 0.1 ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C Pu lse PDM PW T 0.03 1s t ho D= PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 7 2SJ181(L), 2SJ181(S) Switching Time Test Circuit Vin Monitor D.U.T. RL 90% Vin -10 V 50 V DD = -30 V Vout td(on) 90% 10% tr td(off) 90% 10% tf Vout Monitor Vin 10% Waveforms 8 Unit: mm 6.5 0.5 5.4 0.5 1.7 0.5 2.3 0.2 0.55 0.1 5.5 0.5 1.2 0.3 3.1 0.5 1.15 0.1 0.8 0.1 16.2 0.5 2.29 0.5 2.29 0.5 0.55 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) DPAK (L)-(1) -- Conforms 0.42 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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